| PART |
Description |
Maker |
| RFP50N06 RF1S50N06SM RFG50N06 FN3575 |
50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
50A 60V 0.022 Ohm N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STW60NE10 |
60 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-CHANNEL 100V - 0.016 OHM - 60A TO-247 STRIPFET POWER MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STD40NE03L STD40NE03LT4 |
20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-CHANNEL 30V - 0.012 OHM - 40A TO-252 STRIPFET POWER MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| FDB603ALL86Z |
33 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FRS9230R FRS9230D FRS9230H |
4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs 4 A, 200 V, 1.32 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
|
| RFP2N20 FN2881 |
2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET
2A 200V 3.500 Ohm N-Channel Power MOSFET
From old datasheet system
2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
